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Samsung MZ-V9S4T0 - BW

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Product information


Product description

Spectacular speed everyday
Blast through tasks faster. 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.

Keep cool and power through your day
Optimised efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73% compared to the 990 EVO, achieving the same power level and thermal control with less power consumption. Stay focused on work or play without worrying about overheating or battery life.

Extra space. Extra speed.
Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data faster and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.

Samsung Magician software
Make your SSD work like magic. Samsung Magician software's optimisation tools ensure the best SSD performance. It's a safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.

Bringing innovations to life
For decades, Samsungs NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.

Performance
Up to 7,250MB/s of sequential read speed, 45% faster speed than the previous model, the 990 EVO.

Power efficiency
Power efficiency enhanced by 73% compared to the 990 EVO for more MB/s per watt, while maintaining performance and thermal control.

Versatility
Up to 4TB capacity and rapid Intelligent TurboWrite 2.0.


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Specifications

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General

DPN
MZV9S4T0BW
Merk
Samsung
MPN
MZ-V9S4T0BW
EAN
8806095575667
Duurzame Keuze
No

Performance

Mean time between failures (MTBF)
1500000 h
DevSlp (device sleep) support
Yes
Hardware encryption
Yes
TRIM support
Yes
S.M.A.R.T. support
Yes
Security algorithms
256-bit AES
Random write (4KB)
1400000 IOPS
Random read (4KB)
1050000 IOPS
Memory type
V-NAND TLC
NVM Express (NVMe) version
2.0
NVMe
Yes
Component for
PC
Write speed
6300 MB/s
Read speed
7250 MB/s
Solid-state drive capacity
4 TB

Energy

Power consumption DevSlp (device sleep)
5 mW
Power consumption (idle)
0.06 W
Power consumption (read)
5.5 W
Power consumption (write)
4.8 W
Operating voltage
3.3 V

Technical details

Operating shock
1500 G
Operating temperature (T-T)
0 - 70 °C

Design

SSD form factor
M.2

Characteristics

M.2 SSD size
2280 (22 x 80 mm)
Interface
PCI Express 4.0

Weight and size

Weight
9 g
Height
80.2 mm
Depth
2.38 mm
Width
80.2 mm
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